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Cadmium sulfide/copper ternary heterojunction cell research. Final subcontract report

Technical Report ·
OSTI ID:5763756

The properties of polycrystalline, thin-film CuInSe/sub 2//CdS and CuInSe/sub 2//(Cd,Zn)S solar cells prepared by vacuum evaporation techniques are described. First results are presented on preparation of CuIn/sub 1-x/Ga/sub x/Se/sub 2/ polycrystalline thin-films and CuIn/sub 1-x/Se/sub 2//CdS photovoltaic devices. X-ray diffraction and photoluminescence results on the films are given. Current-voltage and spectral response measurements are reported on CuIn/sub 1-x/Ga/sub x/Se/sub 2//CdS devices that show the higher V/sub oc/ and wider band gap expected. Experiments on annealing of CuInSe/sub 2/ in H/sub 2/Se which produced grain sizes of up to 20 ..mu..m are reported. Thermally stimulated capacitance, isothermal capacitance transient spectroscopy, and a new transient capacitance technique applied to CuInSe/sub 2//CdS cells are described. Application of film and device analysis techniques (SEM, EDS, EBIC, and laser spot scans) are described. Low-temperature photoluminescence of CuInSe/sub 2/ films is discussed along with a proposed energy level model. Results of epitaxial deposition, ionized cluster beam deposition, and deposition of CuInSe/sub 2/ in an oxygen ambient are discussed. Loss analysis results and reports pertaining to cell analysis and theoretical cell mechanism studies are presented.

Research Organization:
Boeing Aerospace Co., Seattle, WA (USA)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5763756
Report Number(s):
SERI/STR-211-2546; ON: DE85008778
Country of Publication:
United States
Language:
English