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U.S. Department of Energy
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Optimization of p-CuInSe/sub 2/n-CdZnS solar cells. Final subcontract report, 15 April 1984-30 September 1985

Technical Report ·
DOI:https://doi.org/10.2172/5555125· OSTI ID:5555125

This research was conducted to fabricate CuInSe/sub 2//CdS solar cells on well-characterized CuInSe/sub 2/ single-crystal wafers in order to improve our understanding of thin-film polycrystalline devices. CuInSe/sub 2/ wafers were supplied to the Institute of Energy by K. Bachmann of North Carolina State University. CdS was deposited onto the wafers to make CuInSe/sub 2//CdS heterojunctions. Some wafers were treated in a Se atmosphere to lower the resistivity and to homogenize properties through the wafer. Not all wafers were single-crystal. The wafers were characterized in terms of resistivity, carrier type, composition and crystallographic structure. The CuInSe/sub 2//CdS cells had efficiencies over 4% and open-circuit voltages over 0.45 V. The number of wafers and their quality limited the device performance achievable in this work.

Research Organization:
Delaware Univ., Newark (USA). Inst. of Energy Conversion
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5555125
Report Number(s):
SERI/STR-211-2931; ON: DE86010700
Country of Publication:
United States
Language:
English