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U.S. Department of Energy
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CuInSe/sub 2/ solar cell research by sputter depositon. Annual subcontract report, 1 December 1984-31 December 1985

Technical Report ·
DOI:https://doi.org/10.2172/5751711· OSTI ID:5751711

This report describes subcontracted work on in-line sputtering equipment with a vacuum interlock and four deposition chambers configured for depositing CuInSe/sub 2//CdS heterojunctions by reactive sputtering without breaking vaccum. The unit designed by Telic Corp., was installed and tested in the Coordinated Science Laboratory, University of Illinois. Characterization facilities were also assembled for measuring cell current-voltage characteristics in the dark and under illumination, and for making spectral response, capacitance-voltage, and optical absorption coefficient and band-gap measurements. Experiments were conducted to investigate two-layer CuInSe/sub 2/ coatings formed by depositing an In-rich top layer over a Cu-rich, two-phase (Cu/sub 2/Se-CuInSe/sub 2/) base layer. Solid state reactions during deposition appear to yield a nearly homogeneous chalcopyrite material. Deposition conditions can be selected that consistently yield compositions within the range required for device fabrication. Devices with efficiencies of 4 to 6% have been fabricated from this material.

Research Organization:
Illinois Univ., Urbana (USA)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5751711
Report Number(s):
SERI/STR-211-2923; ON: DE86004449
Country of Publication:
United States
Language:
English