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U.S. Department of Energy
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CuInSe/sub 2/ solar cell research by sputter deposition: Final subcontract report, January 1985--November 10, 1987

Technical Report ·
OSTI ID:5786024

This is the final report for a program that began January 1,1986 and ended November 10, 1987. The program focused on developing reactive sputtering as a technique for deposition of CuInSe/sub 2/ and high-efficiency CuInSe/sub 2//CdS heterojunction solar cells. Most of the CuInSe/sub 2//CdS devices fabricated thus far from CuInSe/sub 2/ deposited by reactive sputtering are characterized by relatively low efficiencies caused primarily by low open-circuit voltages, V/sub oc/. A contributor to the low V/sub oc/ appears to be the lower In atom fraction relative to device layers prepared by evaporation, in the top layer of composite two-layer CuInSe/sub 2/ films (Cu-rich base layer, In-rich top layer) used in our cell fabrication attempts. The lower In fraction is caused by an In-rejection phenomenon that occurs at elevated growth temperatures. This program has focused significant effort on understanding and correcting the phenomenon. Variations in the relative currents to the Cu and In sputtering sources, the H/sub 2/Se injection rate, and the substrate temperature have been explored. Slight reductions in the substrate temperature have been found to be effective for increasing the In fraction in the films. 34 refs., 24 figs., 11 tabs.

Research Organization:
Illinois Univ., Urbana, IL (USA)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5786024
Report Number(s):
SERI/STR-211-3540; ON: DE89009450
Country of Publication:
United States
Language:
English