CuInSe/sub 2/ solar cell research by sputter deposition: Final subcontract report, January 1985--November 10, 1987
This is the final report for a program that began January 1,1986 and ended November 10, 1987. The program focused on developing reactive sputtering as a technique for deposition of CuInSe/sub 2/ and high-efficiency CuInSe/sub 2//CdS heterojunction solar cells. Most of the CuInSe/sub 2//CdS devices fabricated thus far from CuInSe/sub 2/ deposited by reactive sputtering are characterized by relatively low efficiencies caused primarily by low open-circuit voltages, V/sub oc/. A contributor to the low V/sub oc/ appears to be the lower In atom fraction relative to device layers prepared by evaporation, in the top layer of composite two-layer CuInSe/sub 2/ films (Cu-rich base layer, In-rich top layer) used in our cell fabrication attempts. The lower In fraction is caused by an In-rejection phenomenon that occurs at elevated growth temperatures. This program has focused significant effort on understanding and correcting the phenomenon. Variations in the relative currents to the Cu and In sputtering sources, the H/sub 2/Se injection rate, and the substrate temperature have been explored. Slight reductions in the substrate temperature have been found to be effective for increasing the In fraction in the films. 34 refs., 24 figs., 11 tabs.
- Research Organization:
- Illinois Univ., Urbana, IL (USA)
- DOE Contract Number:
- AC02-83CH10093
- OSTI ID:
- 5786024
- Report Number(s):
- SERI/STR-211-3540; ON: DE89009450
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
COPPER SELENIDE SOLAR CELLS
DEPOSITION
DIRECT ENERGY CONVERTERS
DOCUMENT TYPES
EFFICIENCY
EQUIPMENT
FABRICATION
FILMS
INDIUM SELENIDE SOLAR CELLS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PROGRESS REPORT
SOLAR CELLS
SOLAR EQUIPMENT
SPUTTERING
THIN FILMS