Direct printing of metal contacts on 4H-SiC for radiation detection
Additive manufacturing (AM) has created the possibility of replacing traditional manufacturing techniques with faster, versatile and cost-effective production options. Here, we employed AM techniques to fabricate silicon carbide (SiC) radiation detectors based on commercial 4H-SiC wafers. Platinum (Pt) nanoparticle inks were synthesized and printed onto the surface of a 4H-SiC wafer using an aerosol jet printing technique to create Schottky diodes for radiation detection. The additive printed detectors were characterized for surface morphology through a scanning electron microscope (SEM) and atomic force microscope (AFM), and electronically by current-voltage (IV), capacitance-voltage (CV) and finally by alpha spectroscopy measurements. Lastly, the printed detector achieved an energy resolution of 3.24% FWHM at 5.486 MeV, compared to 0.62% FWHM of a SiC detector fabricated by conventional clean room technologies and 0.3% FWHM of a commercially available Si detector.
- Research Organization:
- Georgia Institute of Technology, Atlanta, GA (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- NA0003921
- OSTI ID:
- 1595771
- Journal Information:
- AIP Advances, Vol. 9, Issue 9; ISSN 2158-3226
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
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