Direct metal contacts printing on 4H-SiC for alpha detectors and inhomogeneous Schottky barriers

Taylor, Neil R.; Yu, Yongchao; Ji, Mihee; Joshi, Pooran; Cao, Lei R.

doi:10.1016/j.nima.2020.164961

Direct metal contacts printing on 4H-SiC for alpha detectors and inhomogeneous Schottky barriers

Journal Article · Tue Dec 15 00:00:00 EST 2020 · Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment

DOI:https://doi.org/10.1016/j.nima.2020.164961· OSTI ID:1819546

^[1]; Yu, Yongchao ^[2]; ^[3]; ^[3]; Cao, Lei R. ^[4]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); The Ohio State Univ., Columbus, OH (United States)
Univ. of Tennessee, Knoxville, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
The Ohio State Univ., Columbus, OH (United States)

Electrical characterization of several 4H-SiC Schottky diodes with Aerosol-Jet printed gold (Au), silver (Ag), and platinum (Pt) contacts was performed using forward and reverse current–voltage (IV) measurements. From these measurements, device parameters such as Schottky barrier height and ideality factor were determined; however, many of the devices exhibited nonideal behavior and inferior performance characterized by ideality factors significantly greater than one, disproportionate low voltage leakage current and low barrier heights. Forward current–voltage (FIV) characteristics were fitted to an inhomogeneous barrier height theory to explain the abnormal behavior exhibited by the printed devices. Here, transmission electron microscopy (TEM) of the device cross-sections was performed to investigate the printed metal and semiconductor epitaxial layer interface, which revealed the imperfections in the metal–semiconductor contact. Despite these irregularities, alpha radiation detection capability of these devices was still achieved with an energy resolution of 1.89% at 5.486 MeV, and the best achievable resolution at 0.51% with no energy degradation of 5.486 MeV.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1819546

Alternate ID(s):: OSTI ID: 1776950

Journal Information:: Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment, Journal Name: Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment Vol. 989; ISSN 0168-9002

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Direct metal contacts printing on 4H-SiC for alpha detectors and inhomogeneous Schottky barriers

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