Analysis of forward current-voltage characteristics of nonideal Ti/4H-SiC Schottky barriers
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Forward current-voltage characteristics of nonideal Ti/4H-SiC Schottky contacts with an ideality factor n = 1.1-1.2 in the exponential portion of the characteristics have been analyzed. The nonideality was considered to be a result of the formation of a thin dielectric layer between the deposited titanium layer and 4H-SiC. The following electrical parameters of the contacts were determined from experimental current-voltage characteristics: energy barrier height, thickness of the intermediate dielectric layer, and energy distribution of the density of states at the insulator-semiconductor interface.
- OSTI ID:
- 21260426
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 2 Vol. 43; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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