Thermal and radiation response of 4H–SiC Schottky diodes with direct-write electrical contacts

Taylor, Neil R.; Yu, Yongchao; Ji, Mihee; Aytug, Tolga; Mahurin, Shannon; Mayes, Richard; Cetiner, Sacit; Paranthaman, M. Parans; Ezell, Dianne; Cao, Lei R.; Joshi, Pooran C.

doi:10.1063/5.0007496

Thermal and radiation response of 4H–SiC Schottky diodes with direct-write electrical contacts

Journal Article · Thu Jun 25 00:00:00 EDT 2020 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0007496· OSTI ID:1651350

^[1]; Yu, Yongchao ^[2]; ^[2]; ^[2]; ^[2]; ^[2]; ^[2]; ^[2]; ^[2]; ^[3]; ^[2]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); The Ohio State Univ., Columbus, OH (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
The Ohio State Univ., Columbus, OH (United States)

In this work, a high-sensitivity 4H–SiC temperature sensor and an alpha detector have been fabricated using additively printed metal contacts. The surface morphology and electrical conductivity of the printed electrodes were established prior to Schottky diode development. 4H–SiC Schottky diodes with direct-write printed silver contacts on the 5 μm-thick epilayer on 4H–SiC were characterized electrically in terms of the forward and reverse current–voltage and high-frequency capacitance–voltage characteristics. Furthermore, the turn-on voltage of the Schottky diodes, as established from the forward current–voltage characteristics measured up to a temperature of 400 °C, showed a linear temperature dependence. Schottky diodes with direct-write printed Ag electrodes were able to measure alpha particles emitted from Americium-241. The high temperature and radiation response of the Schottky diodes show their suitability for multi-modal sensor fusion on the 4H–SiC platform for harsh environment applications.

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1651350

Alternate ID(s):: OSTI ID: 1635070

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 116; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Thermal and radiation response of 4H–SiC Schottky diodes with direct-write electrical contacts

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