Excess leakage currents in high-voltage 4H-SiC Schottky diodes

Journal Article · Sat May 15 04:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610050180· OSTI ID:21562296

Grekhov, I V; Potapov, A S; Samsonova, T P; Il'inskaya, N D; Kon'kov, O I; Serebrennikova, O Yu ^[1]

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

The high-voltage 4H-SiC Schottky diodes are fabricated with a nickel barrier and a guard system in the form of 'floating' planar p-n junctions. The analysis of I-V characteristics measured in a wide temperature range shows that the forward current is caused by thermionic emission; however, the current is 'excessive' in the reverse direction. It is assumed that the reverse current flows locally through the points of the penetrating-dislocation outcrop to the Ni-SiC interface. The shape of reverse I-V characteristics makes it possible to conclude that the electron transport is governed by the monopolar-injection mechanism (the space-charge limited current) with participation of capture traps.

• OSTI ID: 21562296
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 5 Vol. 44; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBIDES
CARBON COMPOUNDS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CURRENTS
DISLOCATIONS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
EMISSION
FERMIONS
HYDROGEN 4
HYDROGEN ISOTOPES
INTERFACES
ISOTOPES
LEAKAGE CURRENT
LEPTONS
LIGHT NUCLEI
LINE DEFECTS
METALS
NICKEL
NUCLEI
ODD-ODD NUCLEI
P-N JUNCTIONS
PHYSICAL PROPERTIES
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SILICON CARBIDES
SILICON COMPOUNDS
TEMPERATURE RANGE
THERMIONIC EMISSION
TRANSITION ELEMENTS