Leakage currents in 4H-SiC JBS diodes

Journal Article · Thu Mar 15 04:00:00 EDT 2012 · Semiconductors

DOI:https://doi.org/10.1134/S106378261203013X· OSTI ID:22039010

Grekhov, I V; Potapov, A S; Kon'kov, O I; Il'inskaya, N D; Samsonova, T P ^[1]; Korol'kov, O; Sleptsuk, N ^[2]

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1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
2. Tallinn University of Technology, Department of Electronics (Estonia)

Leakage currents in high-voltage 4H-SiC diodes, which have an integrated (p-n) Schottky structure (Junction Barrier Schottky, JBS), have been studied using commercial diodes and specially fabricated (based on a commercial epitaxial material) test Schottky diodes with and without the JBS structure. It is shown that (i) the main role in reverse charge transport is played by SiC crystal structure defects, most probably, by threading dislocations (density {approx}10{sup 4} cm{sup -2}), and (ii) the JBS structure, formed by the implantation of boron, partially suppresses the leakage currents (by up to a factor of 10 at optimal separation, 8 {mu}m between local p-type regions).

• OSTI ID: 22039010
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 46; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON
CHARGE TRANSPORT
DEFECTS
DISLOCATIONS
EPITAXY
LEAKAGE CURRENT
SCHOTTKY BARRIER DIODES
SILICON CARBIDES