Area-Efficient, 600V 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) for Power Converter Applications

Journal Article · Mon Oct 14 00:00:00 EDT 2019 · IEEE Journal of Emerging and Selected Topics in Power Electronics

DOI:https://doi.org/10.1109/jestpe.2019.2947284· OSTI ID:1799219

Yun, Nick ^[1]; Lynch, Justin ^[2]; Sung, Woongje ^[2]

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1. State Univ. of New York Polytechnic Inst., Albany, NY (United States); OSTI
2. State Univ. of New York Polytechnic Inst., Albany, NY (United States)

This article reports the demonstration of a low-voltage (<; 600V) monolithically integrated 4H-silicon carbide (SiC) MOSFET and JBS diode (JBSFET). A singlemetal and thermal treatment process were implemented to form ohmic contacts on the n+ and p+ source regions while forming the Schottky contact on the N- SiC epitaxial layer. Different layout methodologies are discussed for fabricating an energy-efficient low-voltage JBSFET by intermittently placing the JBS diode portion in the orthogonal direction to minimize the device area, hence improving the specific ON-resistance and reducing the overall chip size by 46%. A junction termination extension (JTE)-based edge termination structure (the Hybrid-JTE) was implemented to achieve a high breakdown voltage with a very low leakage current. In addition, it was investigated that the forward characteristic of the JBSFET can be further improved by adopting Ti-based metal as the Schottky contact for the JBS diode. Device design, layout approach, fabrication, electrical characterization, and future prospects of the 4H-SiC JBSFETs are discussed in this article.

• Research Organization: North Carolina State Univ., Raleigh, NC (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE)
• Grant/Contract Number: EE0006521
• OSTI ID: 1799219
• Journal Information: IEEE Journal of Emerging and Selected Topics in Power Electronics, Journal Name: IEEE Journal of Emerging and Selected Topics in Power Electronics Journal Issue: 1 Vol. 8; ISSN 2168-6777
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
JFETs
MOSFET
Schottky diodes
layout
logic gates
silicon carbide
substrates