Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy

Pickrell, G. W.; Armstrong, A. M.; Allerman, A. A.; Crawford, M. H.; Glaser, C. E.; Kempisty, J.; Abate, V. M.

doi:10.1063/1.5110521

Title: Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy

Journal Article · Thu Oct 10 00:00:00 EDT 2019 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.5110521· OSTI ID:1574450

^[1];

^[1]; Allerman, A. A. ^[1]; Crawford, M. H. ^[1]; Glaser, C. E. ^[1]; Kempisty, J. ^[1]; Abate, V. M. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

The impact of dry-etch-induced defects on the electrical performance of regrown, c-plane, GaN p-n diodes where the p-GaN layer is formed by epitaxial regrowth using metal-organic, chemical-vapor deposition was investigated. Diode leakage increased significantly for etched-and-regrown diodes compared to continuously grown diodes, suggesting a defect-mediated leakage mechanism. Deep level optical spectroscopy (DLOS) techniques were used to identify energy levels and densities of defect states to understand etch-induced damage in regrown devices. DLOS results showed the creation of an emergent, mid-gap defect state at 1.90 eV below the conduction band edge for etched-and-regrown diodes. Reduction in both the reverse leakage and the concentration of the 1.90 eV mid-gap state was achieved using a wet chemical treatment on the etched surface before regrowth, suggesting that the 1.90 eV deep level contributes to increased leakage and premature breakdown but can be mitigated with proper post-etch treatments to achieve >600 V reverse breakdown operation.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; NA-0003525

OSTI ID:: 1574450

Alternate ID(s):: OSTI ID: 1570037

Report Number(s):: SAND-2019-12255J; 680257; TRN: US2001232

Journal Information:: Journal of Applied Physics, Vol. 126, Issue 14; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 16 works

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Cited By (1)

Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN Xiao, Ming; Du, Zhonghao; Xie, Jinqiao Applied Physics Letters, Vol. 116, Issue 5 https://doi.org/10.1063/1.5139906	journal	February 2020