Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
|
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|
July 2014 |
400-A (Pulsed) Vertical GaN p-n Diode With Breakdown Voltage of 700 V
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|
June 2014 |
Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition
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July 2009 |
Etching Damages on AlGaN, GaN and InGaN Caused by Hybrid Inductively Coupled Plasma Etch and Photoenhanced Chemical Wet Etch by Schottky Contact Characterizations
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July 2003 |
Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes
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November 2019 |
Removal of Dry-Etch-Induced Surface Layer Damage from p-GaN by Photoelectrochemical Etching
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February 2020 |
Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐ Plane GaN Vertical p–n Diodes
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December 2019 |
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
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December 2017 |
Design of high breakdown voltage vertical GaN p-n diodes with high-K/low-K compound dielectric structure for power electronics applications
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November 2017 |
Room‐temperature photoenhanced wet etching of GaN
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March 1996 |
Vertical Power p-n Diodes Based on Bulk GaN
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February 2015 |
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
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September 2016 |
Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ -${n}$ Junctions With Low Leakage for GaN Power Electronics
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November 2019 |
Hydrogen passivation of deep levels in n–GaN
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September 2000 |
Assessment of deep level defects in m -plane GaN grown by metalorganic chemical vapor deposition
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February 2012 |
1.8 mΩ·cm 2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
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April 2015 |
Dislocation- and crystallographic-dependent photoelectrochemical wet etching of gallium nitride
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April 2004 |
Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
|
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September 2005 |
Dynamic Modeling and Power Loss Analysis of High-Frequency Power Switches Based on GaN CAVET
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October 2016 |
Wet etching of GaN, AlN, and SiC: a review
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|
January 2005 |
Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy
- Browne, David A.; Young, Erin C.; Lang, Jordan R.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 30, Issue 4
https://doi.org/10.1116/1.4727967
|
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|
July 2012 |
Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes
|
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December 2010 |
Electrical effects of plasma damage in p-GaN
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October 1999 |
1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates
|
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|
September 2014 |
Detection of Interstitial Ga in GaN
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|
September 2000 |
Current status and scope of gallium nitride-based vertical transistors for high-power electronics application
|
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June 2013 |
High-Voltage Regrown Nonpolar ${m}$ -Plane Vertical p-n Diodes: A Step Toward Future Selective-Area-Doped Power Switches
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March 2019 |
Observation of inductively coupled-plasma-induced damage on n -type GaN using deep-level transient spectroscopy
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February 2003 |
Low damage dry etch for III-nitride light emitters
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July 2015 |
Investigation of GaN-on-GaN vertical p - n diode with regrown p -GaN by metalorganic chemical vapor deposition
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December 2018 |
GaN Technology for Power Electronic Applications: A Review
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March 2016 |
Reverse Leakage Analysis for As-grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes
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January 2020 |
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
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August 2017 |
A method to determine deep level profiles in highly compensated, wide band gap semiconductors
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April 2005 |
Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition
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March 2008 |
GaN n- and p-type Schottky diodes: Effect of dry etch damage
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July 2000 |
Design of 1.2 kV Power Switches With Low <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm{{\scriptscriptstyle ON}}}$ </tex-math></inline-formula> Using GaN-Based Vertical JFET
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August 2015 |
Schottky diode measurements of dry etch damage in n - and p -type GaN
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July 2000 |
Vertical GaN Power Diodes With a Bilayer Edge Termination
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January 2016 |
Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy
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October 2019 |
Depth and thermal stability of dry etch damage in GaN Schottky diodes
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July 1999 |
Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN
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December 2017 |
Diffusivity of native defects in GaN
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January 2004 |
Mechanism of Yellow Luminescence in GaN
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December 1980 |