Etched-and-Regrown GaN pn -Diodes With 1600 V Blocking Voltage
Journal Article
·
· IEEE Journal of the Electron Devices Society
Not Available
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000; NA0003525
- OSTI ID:
- 1836304
- Alternate ID(s):
- OSTI ID: 1770798
- Report Number(s):
- SAND--2021-2504J; 9359663
- Journal Information:
- IEEE Journal of the Electron Devices Society, Journal Name: IEEE Journal of the Electron Devices Society Vol. 9; ISSN 2168-6734
- Publisher:
- Institute of Electrical and Electronics EngineersCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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OSTI ID:1810369