Position-Dependent Transport of n-p-n Junctions in Axially Doped SiGe Nanowire Transistors

Journal Article · Mon Mar 18 00:00:00 EDT 2019 · IEEE Electron Device Letters

DOI:https://doi.org/10.1109/LED.2019.2905527· OSTI ID:1511610

Delker, Collin J.  ^[1]; Yoo, Jinkyoung  ^[2]; Swartzentruber, Brian S.  ^[3]; Harris, C. Thomas  ^[3]

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1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies

Nanowire transistors are typically undoped devices whose characteristics depend strongly on the injection of carriers from the electrical contacts. Here in this letter, we fabricate and characterize SiGe nanowire transistors with an n-p-n doping profile and with a top gate covering only the p-doped section of the nanowire. For each device, we locate the p-segment with scanning capacitance microscopy, where the p-segment position varies along the channel due to the stochastic nature of our dropcast fabrication technique. The current–voltage characteristics for a series of transistors with different gate positions reveal that the on/off ratios for electrons is the highest when the gated p-type section is closest to the source contact, whereas the on/off ratios for holes is the highest when the gated p-type section is closest to the drain contact.

• Research Organization: Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: 89233218CNA000001
• OSTI ID: 1511610
• Report Number(s): LA-UR-18-28409
• Journal Information: IEEE Electron Device Letters, Vol. 40, Issue 5; ISSN 0741-3106
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE