High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination
This letter reports the first implementation of a hydrogen-plasma-based edge termination technique (HPET) in vertical GaN p-n power diodes grown on bulk GaN substrates using metalorganic chemical vapor deposition. The device with a 9-μm-thick drift layer exhibited a high breakdown voltage (Vbd) of 1.57 kV, a low ON-resistance (RON) of 0.45 mQ · cm2 (or 0.70 mQ · cm2 with current spreading considered) and a high Baliga's figure-of-merit (V $$2\atop{bd}$$/RON) of 5.5 GW/cm2 (or 3.6 GW/cm2) without passivation or field plate, which are close to the theoretical limit of GaN. This technique enabled a significant reduction in leakage current (~106 times at -300 V) and a huge enhancement in V bd (from ~300 V to 1.57 kV). Furthermore, the device showed good forward characteristics with a turn-ON voltage of 3.5 V, an ON-current of ~2 kA/cm2 (or 1.3 kA/cm2), an ON/OFF ratio of -109, and an ideality factor of 1.4. This work shows the HPET can serve as an effective, low cost, and easy-to-implement edge termination technique for high voltage and high power GaN p-n power diodes.
- Research Organization:
- Arizona State Univ., Tempe, AZ (United States)
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- Grant/Contract Number:
- AR0000868
- OSTI ID:
- 1505564
- Journal Information:
- IEEE Electron Device Letters, Vol. 39, Issue 7; ISSN 0741-3106
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Dopant profiling in p-i-n GaN structures using secondary electrons
|
journal | July 2019 |
Similar Records
Effective Selective Area Doping for GaN Vertical Power Transistors Enabled by Innovative Materials Engineering
Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy