Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy

Journal Article · Mon Jan 03 00:00:00 EST 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1846143· OSTI ID:20636797

Skierbiszewski, C; Wasilewski, Z R; Siekacz, M; Feduniewicz, A; Perlin, P; Wisniewski, P; Borysiuk, J; Grzegory, I; Leszczynski, M; Suski, T; Porowski, S ^[1]

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1. High Pressure Research Center, PAS, Sokolowska 29/37, 01-142 Warsaw (Poland)

We report on the InGaN multiquantum laser diodes (LDs) made by rf plasma-assisted molecular beam epitaxy (PAMBE). The laser operation at 408 nm is demonstrated at room temperature with pulsed current injections using 50 ns pulses at 0.25% duty cycle. The threshold current density and voltage for the LDs with cleaved uncoated mirrors are 12 kA/cm{sup 2} (900 mA) and 9 V, respectively. High output power of 0.83 W is obtained during pulse operation at 3.6 A and 9.6 V bias with the slope efficiency of 0.35 W/A. The laser structures are deposited on the high-pressure-grown low dislocation bulk GaN substrates taking full advantage of the adlayer enhanced lateral diffusion channel for adatoms below the dynamic metallic cover. Our devices compare very favorably to the early laser diodes fabricated using the metalorganic vapor phase epitaxy technique, providing evidence that the relatively low growth temperatures used in this process pose no intrinsic limitations on the quality of the blue optoelectronic components that can be fabricated using PAMBE.

• OSTI ID: 20636797
• Journal Information: Applied Physics Letters, Vol. 86, Issue 1; Other Information: DOI: 10.1063/1.1846143; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
CURRENT DENSITY
DEPOSITION
DISLOCATIONS
ELECTRIC POTENTIAL
GALLIUM NITRIDES
INDIUM COMPOUNDS
LASERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PLASMA
PULSES
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THRESHOLD CURRENT
VAPOR PHASE EPITAXY