60 mW continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy

Journal Article · Mon May 29 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2208929· OSTI ID:20779350

Skierbiszewski, C; Wisniewski, P; Siekacz, M; Perlin, P; Feduniewicz-Zmuda, A; Nowak, G; Grzegory, I; Leszczynski, M; Porowski, S ^[1]

---

1. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland)

We demonstrate continuous-wave operation at 411 nm of InGaN multi-quantum-well laser diodes (LDs) made by plasma-assisted molecular-beam epitaxy (PAMBE). The threshold current density and voltage for these LDs are 4.2 kA/cm{sup 2} and 5.3 V, respectively. High optical output power of 60 mW is achieved. The LDs are fabricated on low-dislocation-density bulk GaN substrates, at growth conditions which resemble liquid-phase epitaxy. We show that use of such substrates eliminates spiral growth, which is the dominant growth mechanism for PAMBE on high-dislocation-density substrates. Therefore, PAMBE opens new perspectives for next generation of InGaN LDs.

• OSTI ID: 20779350
• Journal Information: Applied Physics Letters, Vol. 88, Issue 22; Other Information: DOI: 10.1063/1.2208929; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
CURRENT DENSITY
DISLOCATIONS
ELECTRIC POTENTIAL
GALLIUM NITRIDES
LIQUID PHASE EPITAXY
MOLECULAR BEAM EPITAXY
PLASMA
QUANTUM WELLS
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SUBSTRATES
THRESHOLD CURRENT