Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

Journal Article · Mon Dec 15 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4904272· OSTI ID:22395514

Lamy, J. -M.; Martin, D.; Grandjean, N. ^[1]; Feltin, E.; Dorsaz, J. ^[2]; Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C. ^[3]

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1. ICMP, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)
2. NOVAGAN AG, CH-1015 Lausanne (Switzerland)
3. EXALOS AG, CH-8952 Schlieren (Switzerland)

We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH{sub 3}-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10{sup −4} Ω cm{sup 2}, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH{sub 3}-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm{sup 2} ridge dimension and a threshold current density of ∼5 kA cm{sup −2} in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al{sub 0.06}Ga{sub 0.94}N:Mg despite the low growth temperature.

• OSTI ID: 22395514
• Journal Information: Applied Physics Letters, Vol. 105, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
AMMONIA
CLADDING
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
GALLIUM NITRIDES
LASERS
LAYERS
MOLECULAR BEAM EPITAXY
ORGANOMETALLIC COMPOUNDS
P-TYPE CONDUCTORS
QUANTUM WELLS
TEMPERATURE DEPENDENCE
THRESHOLD CURRENT
VAPOR PHASE EPITAXY
WAVEGUIDES