1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings

Cho, Minkyu; Xu, Zhiyu; Bakhtiary-Noodeh, Marzieh; Detchprohm, Theeradetch; Daeumer, Matthias A.; Yoo, Jae-Hyuck; Shao, Qinghui; Laurence, Ted A.; Key, Daryl; Hashimoto, Tadao; Letts, Edward; Dupuis, Russell D.; Shen, Shyh-Chiang

doi:10.1109/ted.2023.3295767

Title: 1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings

Journal Article · Tue Jul 25 00:00:00 EDT 2023 · IEEE Transactions on Electron Devices

DOI:https://doi.org/10.1109/ted.2023.3295767· OSTI ID:1996471

^[1];

^[1]; Bakhtiary-Noodeh, Marzieh ^[1];

^[1]; Daeumer, Matthias A. ^[2]; Yoo, Jae-Hyuck ^[2]; Shao, Qinghui ^[2]; Laurence, Ted A. ^[2]; Key, Daryl ^[3]; Hashimoto, Tadao ^[3]; Letts, Edward ^[3];

^[1];

^[1]

Georgia Institute of Technology, Atlanta, GA (United States)
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
SixPoint Materials, Buellton, CA (United States)

Here, this work reports on the fabrication and properties of a homojunction gallium nitride (GaN) p-i-n (PIN) rectifier fabricated on a free-standing GaN substrate. Uniform device performance is achieved with breakdown voltage (BV) >1.2 kV and low ON-resistance × area ( R_ONA ). The statistics of the BV measurements show 58.5% of devices achieve BV >1.3 kV, and 71.1% of devices achieve BV >1.2 kV, as attributed to high quality and control in both epitaxial growth and device process. At room temperature, R_ONA is 0.23 mΩ∙ cm² at a current density ( J ) of 6.9 kA/cm2. The corresponding Baliga’s figure of merit is >5.97 GW/cm². Temperature-dependent reverse I – V measurements were performed and show a positive temperature coefficient of 0.42 V/K, indicating the avalanche capability of reverse breakdown. Further analysis with the Poole-Frenkel model on the temperature-dependent measurement suggested that a trap-assisted tunneling process contributed to the reverse leakage current. Floating guard rings (FGRs) formed by nitrogen implantation serve as an effective edge termination technique in these GaN PIN rectifiers, resulting in uniform performance in both forward and reverse bias.

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Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Energy Efficiency and Renewable Energy (EERE); National Science Foundation (NSF)

Grant/Contract Number:: AC52-07NA27344; ECCS-154217

OSTI ID:: 1996471

Report Number(s):: LLNL-JRNL-844039; 1067145

Journal Information:: IEEE Transactions on Electron Devices, Vol. 70, Issue 9; ISSN 0018-9383

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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Title: 1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings

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