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1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings

Journal Article · · IEEE Transactions on Electron Devices
 [1];  [1];  [1];  [1];  [2];  [2];  [2];  [2];  [3];  [3];  [3];  [1];  [1]
  1. Georgia Institute of Technology, Atlanta, GA (United States)
  2. Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
  3. SixPoint Materials, Buellton, CA (United States)
+ Show Author Affiliations

Here, this work reports on the fabrication and properties of a homojunction gallium nitride (GaN) p-i-n (PIN) rectifier fabricated on a free-standing GaN substrate. Uniform device performance is achieved with breakdown voltage (BV) >1.2 kV and low ON-resistance × area ( RONA ). The statistics of the BV measurements show 58.5% of devices achieve BV >1.3 kV, and 71.1% of devices achieve BV >1.2 kV, as attributed to high quality and control in both epitaxial growth and device process. At room temperature, RONA is 0.23 mΩ∙ cm2 at a current density ( J ) of 6.9 kA/cm2. The corresponding Baliga’s figure of merit is >5.97 GW/cm2. Temperature-dependent reverse I – V measurements were performed and show a positive temperature coefficient of 0.42 V/K, indicating the avalanche capability of reverse breakdown. Further analysis with the Poole-Frenkel model on the temperature-dependent measurement suggested that a trap-assisted tunneling process contributed to the reverse leakage current. Floating guard rings (FGRs) formed by nitrogen implantation serve as an effective edge termination technique in these GaN PIN rectifiers, resulting in uniform performance in both forward and reverse bias.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Energy Efficiency and Renewable Energy (EERE); National Science Foundation (NSF)
Grant/Contract Number:
AC52-07NA27344
OSTI ID:
1996471
Report Number(s):
LLNL-JRNL-844039; 1067145
Journal Information:
IEEE Transactions on Electron Devices, Journal Name: IEEE Transactions on Electron Devices Journal Issue: 9 Vol. 70; ISSN 0018-9383
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English

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Related Subjects

42 ENGINEERING
Gallium nitride (GaN)
PIN rectifiers
edge termination
field guard rings
ion implantation
power devices