Processing and device performance of GaN power rectifiers
Conference
·
OSTI ID:20104630
- and others
Mesa and planar geometry GaN Schottky rectifiers were fabricated on 3--12 {micro}m thick epitaxial layers. In planar diodes utilizing resistive GaN, a reverse breakdown voltage of 3.1 kV was achieved in structures containing p-guard rings and employing extension of the Schottky contact edge over an oxide layer. In devices without edge termination, the reverse breakdown voltage was 2.3 kV. Mesa diodes fabricated on conducting GaN had breakdown voltages in the range 200--400 V, with on-state resistances as low as 6m {Omega}{center_dot}cm{sup {minus}2}.
- Research Organization:
- Univ. of Florida, Gainesville, FL (US)
- OSTI ID:
- 20104630
- Country of Publication:
- United States
- Language:
- English
Similar Records
High Voltage GaN Schottky Rectifiers
Al composition dependence of breakdown voltage in Al{sub x}Ga{sub 1-x}N Schottky rectifiers
High voltage GaN Schottky rectifiers
Journal Article
·
Mon Oct 25 00:00:00 EDT 1999
· IEEE Transaction Electronic Devices
·
OSTI ID:14154
Al composition dependence of breakdown voltage in Al{sub x}Ga{sub 1-x}N Schottky rectifiers
Journal Article
·
Sun Mar 26 23:00:00 EST 2000
· Applied Physics Letters
·
OSTI ID:20215698
High voltage GaN Schottky rectifiers
Journal Article
·
Fri Mar 31 23:00:00 EST 2000
· IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers)
·
OSTI ID:20030430