Al composition dependence of breakdown voltage in Al{sub x}Ga{sub 1-x}N Schottky rectifiers
- Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
- Institute of Rare Metals, Moscow 109017, Russia (Russian Federation)
- Epitronics, Phoenix, Arizona 85027 (United States)
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
Planar geometry, lateral Schottky rectifiers were fabricated on high resistivity Al{sub x}Ga{sub 1-x}N (x=0-0.25) epitaxial layers grown on sapphire substrates. The reverse breakdown voltages of unpassivated devices increased with Al composition, varying from 2.3 kV for GaN to 4.3 kV for Al{sub 0.25}Ga{sub 0.75}N. The reverse current-voltage (I-V) characteristics showed classical Shockley-Read-Hall recombination as the dominant mechanism, with I{proportional_to}V{sup 0.5}. The reverse current density in all diodes was in the range 5-10x10{sup -6} A cm{sup -2} at 2 kV. The use of p{sup +} guard rings was effective in preventing premature edge breakdown and with optimum ring width increased V{sub B} from 2.3 to 3.1 kV in GaN diodes. (c) 2000 American Institute of Physics.
- OSTI ID:
- 20215698
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 76; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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