Lateral Al{sub x}Ga{sub 1-x}N power rectifiers with 9.7 kV reverse breakdown voltage
Al{sub x}Ga{sub 1-x}N (x=0--0.25) Schottky rectifiers were fabricated in a lateral geometry employing p{sup +}-implanted guard rings and rectifying contact overlap onto an SiO{sub 2} passivation layer. The reverse breakdown voltage (V{sub B}) increased with the spacing between Schottky and ohmic metal contacts, reaching 9700 V for Al{sub 0.25}Ga{sub 0.75}N and 6350 V for GaN, respectively, for 100 {mu}m gap spacing. Assuming lateral depletion, these values correspond to breakdown field strengths of {<=}9.67x10{sup 5}Vcm{sup -1}, which is roughly a factor of 20 lower than the theoretical maximum in bulk GaN. The figure of merit (V{sub B}){sup 2}/R{sub ON}, where R{sub ON} is the on-state resistance, was in the range 94--268 MWcm-2 for all the devices.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40205277
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 78; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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