Temperature dependence and current transport mechanisms in Al{sub x}Ga{sub 1-x}N Schottky rectifiers
- Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87195 (United States)
- Institute of Rare Metals, Moscow 109017, Russia (Russian Federation)
- Epitronics, Phoenix, Arizona 85027 (United States)
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
GaN and Al{sub 0.25}Ga{sub 0.75}N lateral Schottky rectifiers were fabricated either with (GaN) or without (AlGaN) edge termination. The reverse breakdown voltage V{sub B} (3.1 kV for GaN; 4.3 kV for AlGaN) displayed a negative temperature coefficient of -6.0{+-}0.4 V K{sup -1} for both types of rectifiers. The reverse current originated from contact periphery leakage at moderate bias, while the forward turn-on voltage at a current density of 100 A cm-2 was {approx}5 V for GaN and {approx}7.5 V for AlGaN. The on-state resistances, R{sub ON}, were 50 m{omega} cm2 for GaN and 75 m{omega} cm2 for AlGaN, producing figures-of-merit (V{sub RB}){sup 2}/R{sub ON} of 192 and 246 MW cm-2, respectively. The activation energy of the reverse leakage was 0.13 eV at moderate bias. (c) 2000 American Institute of Physics.
- OSTI ID:
- 20216734
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 76; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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