Analytic band-to-trap tunneling model including band offset for heterojunction devices

Gao, Xujiao; Kerr, Bert; Huang, Andy

doi:10.1063/1.5078685

Title: Analytic band-to-trap tunneling model including band offset for heterojunction devices

Journal Article · Tue Feb 05 00:00:00 EST 2019 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.5078685· OSTI ID:1498487

^[1]; Kerr, Bert ^[2];

^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
New Mexico Institute of Mining and Technology, Socorro, NM (United States)

In this paper, we present an analytic band-to-trap tunneling model based on the open boundary scattering approach. The new model has three major advantages: (i) It includes not only the well-known electric field effect, but more importantly, the effect of heterojunction band offset. This feature allows us to simulate both electric field and band offset enhanced carrier recombination near a heterojunction in heterostructures. (ii) Its analytic form enables straightforward implementation into a parallel Technology Computer Aided Design device and circuit simulators. (iii) The developed method can be used for any potentials which can be approximated to a good degree such that the Schrödinger equation with open boundary conditions results in piecewise analytic wave functions. Simulation results of an InGaP/GaAs heterojunction bipolar transistor (HBT) reveal that the proposed model predicts significantly increased base currents, because the tunneling of holes in the base to traps in the emitter is greatly enhanced by the emitter-base band offset. Lastly, this finding, which is not captured by existing band-to-trap tunneling models, is consistent with the experimental observation for an InGaP/GaAs HBT after neutron irradiation.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1498487

Report Number(s):: SAND-2018-11780J; 669296

Journal Information:: Journal of Applied Physics, Vol. 125, Issue 5; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 8 works

Citation information provided by
Web of Science

References (35)

Thermal Design and Characterization of Heterogeneously Integrated InGaP/GaAs HBTs Choi, Sukwon; Peake, Gregory M.; Keeler, Gordon A. IEEE Transactions on Components, Packaging and Manufacturing Technology, Vol. 6, Issue 5 https://doi.org/10.1109/TCPMT.2016.2541615	journal	May 2016
Field dependent emission rates in radiation damaged GaAs Fleming, R. M.; Myers, S. M.; Wampler, W. R. Journal of Applied Physics, Vol. 116, Issue 1 https://doi.org/10.1063/1.4885156	journal	July 2014
Numerical modeling of heterojunctions including the thermionic emission mechanism at the heterojunction interface Horio, K.; Yanai, H. IEEE Transactions on Electron Devices, Vol. 37, Issue 4 https://doi.org/10.1109/16.52447	journal	April 1990
Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary condition Yang, Kyounghoon; East, Jack R.; Haddad, George I. Solid-State Electronics, Vol. 36, Issue 3 https://doi.org/10.1016/0038-1101(93)90083-3	journal	March 1993
Exact Green's function for rectangular potentials and its application to quasi-bound states Andrade, Fabiano M. Physics Letters A, Vol. 378, Issue 21 https://doi.org/10.1016/j.physleta.2014.03.042	journal	April 2014
Erratum: ‘‘Accurate, short series approximation to Fermi–Dirac integrals of order −1/2, 1/2, 1, 3/2, 2, 5/2, 3, and 7/2’’ [J. Appl. Phys. 5 7 , 5271 (1985)] Van Halen, P.; Pulfrey, D. L. Journal of Applied Physics, Vol. 59, Issue 6 https://doi.org/10.1063/1.337053	journal	March 1986
Streamline upwind/Petrov-Galerkin formulations for convection dominated flows with particular emphasis on the incompressible Navier-Stokes equations Brooks, Alexander N.; Hughes, Thomas J. R. Computer Methods in Applied Mechanics and Engineering, Vol. 32, Issue 1-3 https://doi.org/10.1016/0045-7825(82)90071-8	journal	September 1982
Statistics of the Recombinations of Holes and Electrons Shockley, W.; Read, W. T. Physical Review, Vol. 87, Issue 5 https://doi.org/10.1103/PhysRev.87.835	journal	September 1952
Electric-Field Effects on Optical Absorption near Thresholds in Solids Aspnes, David E. Physical Review, Vol. 147, Issue 2 https://doi.org/10.1103/PhysRev.147.554	journal	July 1966
Three-Dimensional Fully-Coupled Electrical and Thermal Transport Model of Dynamic Switching in Oxide Memristors Gao, X.; Mamaluy, D.; Mickel, P. R. ECS Transactions, Vol. 69, Issue 5 https://doi.org/10.1149/06905.0183ecst	journal	September 2015
A parameter-free stabilized finite element method for scalar advection-diffusion problems Bochev, Pavel; Peterson, Kara Open Mathematics, Vol. 11, Issue 8 https://doi.org/10.2478/s11533-013-0250-8	journal	January 2013
Model for transport and reaction of defects and carriers within displacement cascades in gallium arsenide Wampler, William R.; Myers, Samuel M. Journal of Applied Physics, Vol. 117, Issue 4 https://doi.org/10.1063/1.4906104	journal	January 2015
Excess Noise in Narrow Germanium p - n Junctions Yajima, Tatsuo; Esaki, Leo Journal of the Physical Society of Japan, Vol. 13, Issue 11 https://doi.org/10.1143/JPSJ.13.1281	journal	November 1958
Exact Green’s function for the step and square-barrier potentials de Aguiar, M. A. M. Physical Review A, Vol. 48, Issue 4 https://doi.org/10.1103/PhysRevA.48.2567	journal	October 1993
Comparison of transport models far the simulation of degenerate semiconductors Schroeder, D.; Ostermann, T.; Kalz, O. Semiconductor Science and Technology, Vol. 9, Issue 4 https://doi.org/10.1088/0268-1242/9/4/005	journal	April 1994
(Invited) Comprehensive Assessment of Oxide Memristors As Post-CMOS Memory and Logic Devices Gao, X.; Mamaluy, D.; Cyr, E. C. ECS Transactions, Vol. 72, Issue 3 https://doi.org/10.1149/07203.0049ecst	journal	April 2016
Effective band‐gap shrinkage in GaAs Harmon, E. S.; Melloch, M. R.; Lundstrom, M. S. Applied Physics Letters, Vol. 64, Issue 4 https://doi.org/10.1063/1.111110	journal	January 1994
Contact block reduction method for ballistic transport and carrier densities of open nanostructures Mamaluy, D.; Vasileska, D.; Sabathil, M. Physical Review B, Vol. 71, Issue 24 https://doi.org/10.1103/PhysRevB.71.245321	journal	June 2005
Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset Gao, Xujiao; Huang, Andy; Kerr, Bert ECS Transactions, Vol. 80, Issue 10 https://doi.org/10.1149/08010.1005ecst	journal	October 2017
Finite-element simulation of GaAs MESFET's with lateral doping profiles and submicron gates Barnes, J. J.; Lomax, R. J.; Haddad, G. I. IEEE Transactions on Electron Devices, Vol. 23, Issue 9 https://doi.org/10.1109/T-ED.1976.18533	journal	September 1976
A new recombination model for device simulation including tunneling Hurkx, G. A. M.; Klaassen, D. B. M.; Knuvers, M. P. G. IEEE Transactions on Electron Devices, Vol. 39, Issue 2 https://doi.org/10.1109/16.121690	journal	January 1992
A simple method for simulating scanning tunneling images Donner, B.; Kleber, M.; Bracher, C. American Journal of Physics, Vol. 73, Issue 8 https://doi.org/10.1119/1.1930867	journal	August 2005
Optical Absorption in the Presence of a Uniform Field Tharmalingam, K. Physical Review, Vol. 130, Issue 6 https://doi.org/10.1103/PhysRev.130.2204	journal	June 1963
Three-dimensional tunneling in quantum ballistic motion Bracher, C.; Becker, W.; Gurvitz, S. A. American Journal of Physics, Vol. 66, Issue 1 https://doi.org/10.1119/1.18806	journal	January 1998
Relation between electroabsorption in bulk semiconductors and in quantum wells: The quantum-confined Franz-Keldysh effect Miller, D. A. B.; Chemla, D. S.; Schmitt-Rink, S. Physical Review B, Vol. 33, Issue 10 https://doi.org/10.1103/PhysRevB.33.6976	journal	May 1986
Magnetic field effects on trap‐assisted tunneling in Hg _0.78 Cd _0.22 Te metal‐insulator semiconductor capacitors Waterman, J. R.; Wagner, R. J.; Perez, J. M. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 7, Issue 2 https://doi.org/10.1116/1.576107	journal	March 1989
Accurate, short series approximations to Fermi–Dirac integrals of order −1/2, 1/2, 1, 3/2, 2, 5/2, 3, and 7/2 Van Halen, P.; Pulfrey, D. L. Journal of Applied Physics, Vol. 57, Issue 12 https://doi.org/10.1063/1.335269	journal	June 1985
A model for the field and temperature dependence of Shockley-Read-Hall lifetimes in silicon Schenk, A. Solid-State Electronics, Vol. 35, Issue 11 https://doi.org/10.1016/0038-1101(92)90184-E	journal	November 1992
Efficient self-consistent quantum transport simulator for quantum devices Gao, X.; Mamaluy, D.; Nielsen, E. Journal of Applied Physics, Vol. 115, Issue 13 https://doi.org/10.1063/1.4870288	journal	April 2014
Carrier transport across heterojunction interfaces Wu, C. M.; Yang, E. S. Solid-State Electronics, Vol. 22, Issue 3 https://doi.org/10.1016/0038-1101(79)90028-5	journal	March 1979
An improved approach to the Shockley–Read–Hall recombination in inhomogeneous fields of space‐charge regions Schenk, A. Journal of Applied Physics, Vol. 71, Issue 7 https://doi.org/10.1063/1.350929	journal	April 1992
Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model Myers, Samuel M.; Wampler, William R.; Modine, Normand A. Journal of Applied Physics, Vol. 120, Issue 13 https://doi.org/10.1063/1.4963873	journal	October 2016
Carrier mobilities in silicon empirically related to doping and field Caughey, D. M.; Thomas, R. E. Proceedings of the IEEE, Vol. 55, Issue 12 https://doi.org/10.1109/PROC.1967.6123	journal	January 1967
A new Control Volume Finite Element Method for the stable and accurate solution of the drift–diffusion equations on general unstructured grids Bochev, Pavel; Peterson, Kara; Gao, Xujiao Computer Methods in Applied Mechanics and Engineering, Vol. 254 https://doi.org/10.1016/j.cma.2012.10.009	journal	February 2013
Exact Green's function for rectangular potentials and its application to quasi-bound states Andrade, Fabiano M. arXiv https://doi.org/10.48550/arxiv.1403.5964	text	January 2014

Similar Records

Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset

Journal Article · Wed Oct 25 00:00:00 EDT 2017 · ECS Transactions (Online) · OSTI ID:1498487

Gao, Xujiao; Huang, Andy; Kerr, Bert

Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model

Journal Article · Tue Oct 04 00:00:00 EDT 2016 · Journal of Applied Physics · OSTI ID:1498487

Wampler, William R.; Modine, Normand A.

Comparative investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs heterojunction bipolar transistors

Journal Article · Thu Oct 15 00:00:00 EDT 2015 · Semiconductors · OSTI ID:1498487

Wu, Yi-Chen; Tsai, Jung-Hui; Chiang, Te-Kuang; +1 more

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
36 MATERIALS SCIENCE

Title: Analytic band-to-trap tunneling model including band offset for heterojunction devices

Citation Formats

References (35)

Similar Records

Related Subjects