Comparative investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs heterojunction bipolar transistors

Journal Article · Thu Oct 15 04:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615100279· OSTI ID:22469716

Wu, Yi-Chen ^[1]; Tsai, Jung-Hui ^[2]; Chiang, Te-Kuang; Wang, Fu-Min ^[1]

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1. National University of Kaohsiung, Department of Electrical Engineering (China)
2. National Kaohsiung Normal University, Department of Electronic Engineering (China)

In this article the characteristics of In{sub 0.49}Ga{sub 0.51}P/GaAs/GaAs{sub 0.975}Bi{sub 0.025} and In{sub 0.49}Ga{sub 0.51}P/GaAs heterojunction bipolar transistor (HBTs) are demonstrated and compared by two-dimensional simulated analysis. As compared to the traditional InGaP/GaAs HBT, the studied InGaP/GaAs/GaAsBi HBT exhibits a higher collector current, a lower base-emitter (B–E) turn-on voltage, and a relatively lower collector-emitter offset voltage of only 7 mV. Because the more electrons stored in the base is further increased in the InGaP/GaAs/GaAsBi HBT, it introduces the collector current to increase and the B–E turn-on voltage to decrease for low input power applications. However, the current gain is slightly smaller than the traditional InGaP/GaAs HBT attributed to the increase of base current for the minority carriers stored in the GaAsBi base.

• OSTI ID: 22469716
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 10 Vol. 49; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH COMPOUNDS
COMPARATIVE EVALUATIONS
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRONS
GAIN
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM PHOSPHIDES
TRANSISTORS
TWO-DIMENSIONAL SYSTEMS