Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset

Journal Article · Wed Oct 25 00:00:00 EDT 2017 · ECS Transactions (Online)

DOI:https://doi.org/10.1149/08010.1005ecst· OSTI ID:1429661

Gao, Xujiao ^[1]; Huang, Andy ^[1]; Kerr, Bert ^[2]

---

1. Sandia National Lab. (SNL-CA), Livermore, CA (United States)
2. New Mexico Institute of Mining and Technology, Socorro, NM (United States)

In this paper, we present an efficient band-to-trap tunneling model based on the Schenk approach, in which an analytic density-of-states (DOS) model is developed based on the open boundary scattering method. The new model explicitly includes the effect of heterojunction band offset, in addition to the well-known field effect. Its analytic form enables straightforward implementation into TCAD device simulators. It is applicable to all one-dimensional potentials, which can be approximated to a good degree such that the approximated potentials lead to piecewise analytic wave functions with open boundary conditions. The model allows for simulating both the electric-field-enhanced and band-offset-enhanced carrier recombination due to the band-to-trap tunneling near the heterojunction in a heterojunction bipolar transistor (HBT). Simulation results of an InGaP/GaAs/GaAs NPN HBT show that the proposed model predicts significantly increased base currents, due to the hole-to-trap tunneling enhanced by the emitter-base junction band offset. Finally, the results compare favorably with experimental observation.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: AC04-94AL85000; NA0003525
• OSTI ID: 1429661
• Alternate ID(s): OSTI ID: 1509625
• Report Number(s): SAND--2017-11476J; 658063
• Journal Information: ECS Transactions (Online), Journal Name: ECS Transactions (Online) Journal Issue: 10 Vol. 80; ISSN 1938-6737
• Publisher: Electrochemical Society
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS