Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- New Mexico Institute of Mining and Technology, Socorro, NM (United States)
In this paper, we present an efficient band-to-trap tunneling model based on the Schenk approach, in which an analytic density-of-states (DOS) model is developed based on the open boundary scattering method. The new model explicitly includes the effect of heterojunction band offset, in addition to the well-known field effect. Its analytic form enables straightforward implementation into TCAD device simulators. It is applicable to all one-dimensional potentials, which can be approximated to a good degree such that the approximated potentials lead to piecewise analytic wave functions with open boundary conditions. The model allows for simulating both the electric-field-enhanced and band-offset-enhanced carrier recombination due to the band-to-trap tunneling near the heterojunction in a heterojunction bipolar transistor (HBT). Simulation results of an InGaP/GaAs/GaAs NPN HBT show that the proposed model predicts significantly increased base currents, due to the hole-to-trap tunneling enhanced by the emitter-base junction band offset. Finally, the results compare favorably with experimental observation.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000; NA0003525
- OSTI ID:
- 1429661
- Report Number(s):
- SAND-2017-11476J; 658063
- Journal Information:
- ECS Transactions (Online), Vol. 80, Issue 10; ISSN 1938-6737
- Publisher:
- Electrochemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Analytic band-to-trap tunneling model including band offset for heterojunction devices
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journal | February 2019 |
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