Ferroelectric Control of Interface Spin Filtering in Multiferroic Tunnel Junctions

Tornos, J.; Gallego, F.; Valencia, S.; Liu, Y. H.; Rouco, V.; Lauter, V.; Abrudan, R.; Luo, C.; Ryll, H.; Wang, Q.; Hernandez-Martin, D.; Orfila, G.; Cabero, M.; Cuellar, F.; Arias, D.; Mompean, F. J.; Garcia-Hernandez, M.; Radu, F.; Charlton, T. R.; Rivera-Calzada, A.; Sefrioui, Z.; te Velthuis, S. G.  E.; Leon, C.; Santamaria, J.

doi:10.1103/PhysRevLett.122.037601

Title: Ferroelectric Control of Interface Spin Filtering in Multiferroic Tunnel Junctions

Journal Article · Tue Jan 22 00:00:00 EST 2019 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.122.037601· OSTI ID:1493725

Tornos, J. ^[1]; Gallego, F. ^[1]; Valencia, S. ^[2]; Liu, Y. H. ^[3]; Rouco, V. ^[4]; Lauter, V. ^[5]; Abrudan, R. ^[6]; Luo, C. ^[7]; Ryll, H. ^[2]; Wang, Q. ^[8]; Hernandez-Martin, D. ^[1]; Orfila, G. ^[1]; Cabero, M. ^[1]; Cuellar, F. ^[1]; Arias, D. ^[1]; Mompean, F. J. ^[9]; Garcia-Hernandez, M. ^[9]; Radu, F. ^[2]; Charlton, T. R. ^[10]; Rivera-Calzada, A. ^[11] more »

Univ. Complutense Madrid (Spain)
Hemholtz-Zentrum Berlin für Materialen und Energie, Berlin (Germany)
Argonne National Lab. (ANL), Argonne, IL (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Univ. of Paris-Saclay, Palaiseau (France)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Hemholtz-Zentrum Berlin für Materialen und Energie, Berlin (Germany); Ruhr Univ., Bochum (Germany)
Hemholtz-Zentrum Berlin für Materialen und Energie, Berlin (Germany); Univ. of Regensburg (Germany)
Argonne National Lab. (ANL), Argonne, IL (United States)
Inst. de Ciencia de Materiales de Madrid (Spain); Universidad Complutense de Madrid (Spain)
Science and Technology Facilities Council (STFC), Oxford (United Kingdom). Rutherford Appleton Lab. (RAL)
Univ. Complutense Madrid (Spain); Unidad Asociada UCM/CSIC, Madrid (Spain)

The electronic reconstruction occurring at oxide interfaces may be the source of interesting device concepts for future oxide electronics. Among oxide devices, multiferroic tunnel junctions are being actively investigated as they offer the possibility to modulate the junction current by independently controlling the switching of the magnetization of the electrodes and of the ferroelectric polarization of the barrier. In this Letter, we show that the spin reconstruction at the interfaces of a La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 multiferroic tunnel junction is the origin of a spin filtering functionality that can be turned on and off by reversing the ferroelectric polarization. The ferroelectrically controlled interface spin filter enables a giant electrical modulation of the tunneling magnetoresistance between values of 10% and 1000%, which could inspire device concepts in oxides-based low dissipation spintronics.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357; AC05-00OR22725

OSTI ID:: 1493725

Alternate ID(s):: OSTI ID: 1491619; OSTI ID: 1558466

Journal Information:: Physical Review Letters, Vol. 122, Issue 3; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 22 works

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