Nonvolatile Multilevel States in Multiferroic Tunnel Junctions

Fang, Mei; Zhang, Sangjian; Zhang, Wenchao; Jiang, Lu; Vetter, Eric; Lee, Ho Nyung; Xu, Xiaoshan; Sun, Dali; Shen, Jian

doi:10.1103/PhysRevApplied.12.044049

Nonvolatile Multilevel States in Multiferroic Tunnel Junctions

Journal Article · Tue Oct 22 00:00:00 EDT 2019 · Physical Review Applied

DOI:https://doi.org/10.1103/PhysRevApplied.12.044049· OSTI ID:1606673

^[1]; Zhang, Sangjian ^[1]; Zhang, Wenchao ^[1]; Jiang, Lu ^[2]; Vetter, Eric ^[3]; ^[2]; Xu, Xiaoshan ^[4]; Sun, Dali ^[3]; Shen, Jian ^[5]

Central South Univ. (China)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
North Carolina State Univ., Raleigh, NC (United States)
Univ. of Nebraska, Lincoln, NE (United States)
Fudan Univ., Shanghai (China)

Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed multiferroic tunnel junctions (MFTJs), can be achieved not only by the magnetic alignment of two ferromagnets, but also by the electric polarization of the ferroelectric interlayer; this provides great opportunities for next-generation multistate memory devices. Here, we show that a La_0.67Sr_0.33MnO₃(LSMO)/PbZr_0.2Ti_0.8O₃(PZT)/Co structured MFTJ device can exhibit multilevel resistance states in the presence of gradually reversed ferroelectric domains via tunneling electroresistance and tunneling magnetoresistance, respectively. Nonvolatile ferroelectric control in the MFTJ can be attributed to separate contributions that arise from two independent ferroelectric channels in the PZT interlayer with opposite polarization. Our study shows the dominant role of “mixed” ferroelectric states on achieving accumulative electrical modulation of multilevel resistance states in MFTJs; thus paving the way for multifunctional device applications.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1606673

Journal Information:: Physical Review Applied, Journal Name: Physical Review Applied Journal Issue: 4 Vol. 12; ISSN 2331-7019; ISSN PRAHB2

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
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Electrical conductivity
Ferroelectricity
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Nonvolatile Multilevel States in Multiferroic Tunnel Junctions

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