Octonary resistance states in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 multiferroic tunnel junctions

Tao, Jing; Huang, Wei -Chuan; Liu, Yu -Kuai; Yang, Sheng -Wei; Dong, Si -Ning; Zhu, Yi -Mei; Li, Qi; Li, Xiao -Guang

doi:10.1002/aelm.201500183

Octonary resistance states in La_0.7Sr_0.3MnO₃/BaTiO₃/La_0.7Sr_0.3MnO₃ multiferroic tunnel junctions

Journal Article · Tue Oct 06 00:00:00 EDT 2015 · Advanced Electronic Materials

DOI:https://doi.org/10.1002/aelm.201500183· OSTI ID:1240697

Tao, Jing ^[1]; Huang, Wei -Chuan ^[2]; Liu, Yu -Kuai ^[2]; Yang, Sheng -Wei ^[2]; Dong, Si -Ning ^[2]; Zhu, Yi -Mei ^[1]; Li, Qi ^[3]; Li, Xiao -Guang ^[4]

Brookhaven National Lab. (BNL), Upton, NY (United States)
Univ. of Science and Technology of China, Hefe (People's Republic of China)
Pennsylvania State Univ., University Park, PA (United States)
Univ. of Science and Technology of China, Hefe (People's Republic of China); Nanjing Univ., Nanjing (China)

General drawbacks of current electronic/spintronic devices are high power consumption and low density storage. A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents four resistance states in a single device and therefore provides an alternative way to achieve high density memories. Here, an MFTJ device with eight nonvolatile resistance states by further integrating the design of noncollinear magnetization alignments between the ferromagnetic layers is demonstrated. Through the angle-resolved tunneling magnetoresistance investigations on La_0.7Sr_0.3MnO₃/BaTiO₃/La_0.7Sr_0.3MnO₃ junctions, it is found that, besides collinear parallel/antiparallel magnetic configurations, the MFTJ shows at least two other stable noncollinear (45° and 90°) magnetic configurations. As a result, combining the tunneling electroresistance effect caused by the ferroelectricity reversal of the BaTiO₃ barrier, an octonary memory device is obtained, representing potential applications in high density nonvolatile storage in the future.

View Accepted Manuscript (DOE)

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

OSTI ID:: 1240697

Report Number(s):: BNL--111839-2016-JA; KC0201010

Journal Information:: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 11 Vol. 1; ISSN 2199-160X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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