Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited)

Yin, Y. W.; Raju, Muralikrishna; Hu, W. J.; Burton, J. D.; Kim, Young Min; Borisevich, Albina Y.; Pennycook, Stephen J.; Yang, Sang Mo; Noh, Tae Won; Gruverman, Alexei; Li, X. G.; Zhang, Z. D.; Tsymbal, E. Y.; Li, Qi

doi:10.1063/1.4913753

Title: Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited)

Journal Article · Tue Mar 03 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4913753· OSTI ID:1265591

Yin, Y. W. ^[1]; Raju, Muralikrishna ^[1]; Hu, W. J. ^[2]; Burton, J. D. ^[3]; Kim, Young Min ^[4]; Borisevich, Albina Y. ^[4]; Pennycook, Stephen J. ^[4]; Yang, Sang Mo ^[5]; Noh, Tae Won ^[5]; Gruverman, Alexei ^[3]; Li, X. G. ^[6]; Zhang, Z. D. ^[7]; Tsymbal, E. Y. ^[3]; Li, Qi ^[1]

Pennsylvania State Univ., University Park, PA (United States). Dept. of Physics
King Abdullah Univ. of Science and Technology, Thuwal (Saudi Arabia). Physical Sciences and Engineering Division
Univ. of Nebraska, Lincoln, NE (United States). Dept. of Physics and Astronomy. Nebraska Center for Materials and Nanoscience
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
Seoul National Univ. (Korea, Republic of). Dept. of Physics and Astronomy. IBS-Center for Functional Interfaces of Correlated Electron Systems
Univ. of Science and Technology of China, Hefei (China). Dept. of Physics. Hefei National Lab. for Physical Sciences at Microscale
Chinese Academy of Sciences (CAS), Shenyang (China). Shenyang National Lab. for Materials Science. Inst. of Metal Research

As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. In this paper, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed in manganite/(Ba, Sr)TiO₃/manganite MFTJs at low temperatures and room temperature four-resistance state devices were also obtained. To enhance the TER for potential logic operation with a magnetic memory, La_0.7Sr_0.3MnO₃/BaTiO₃/La_0.5Ca_0.5MnO₃ /La_0.7Sr_0.3MnO₃ MFTJs were designed by utilizing a bilayer tunneling barrier in which BaTiO₃ is ferroelectric and La_0.5Ca_0.5MnO₃ is close to ferromagnetic metal to antiferromagnetic insulator phase transition. The phase transition occurs when the ferroelectric polarization is reversed, resulting in an increase of TER by two orders of magnitude. Finally, tunneling magnetoresistance can also be controlled by the ferroelectric polarization reversal, indicating strong magnetoelectric coupling at the interface.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Natural Science Foundation of China (NSFC); National Basic Research Program of China (NBRPC); Fundamental Research Funds for the Central Universities (FRFCU) (China)

Grant/Contract Number:: AC05-00OR22725; FG02-08ER4653; DMR-1207474; DMR-1411166; DMR-DMR-0820521; 2015CB921201; WK2030020026

OSTI ID:: 1265591

Journal Information:: Journal of Applied Physics, Vol. 117, Issue 17; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 25 works

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