Bismuth interstitial impurities and the optical properties of GaP1-x -yBixNy
Journal Article
·
· Japanese Journal of Applied Physics
- National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
Two distinctive regimes of behavior are observed from GaP1-x-y Bi x N y alloys with x < 2.4%, y < 3.4% grown by molecular beam epitaxy. These regimes are correlated with abundant bismuth interstitial impurities that are encouraged or suppressed according to the sample growth temperature, with up to 55% of incorporated bismuth located interstitially. When bismuth interstitials are present, radiative recombination arises at near-band-edge localized states rather than from impurity bands and deep state luminescence. Finally, this change demonstrates a novel strategy for controlling luminescence in isoelectronic semiconductor alloys and is attributed to a disruption of carrier transfer processes.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1409005
- Report Number(s):
- NREL/JA-5K00-70115
- Journal Information:
- Japanese Journal of Applied Physics, Vol. 56, Issue 11; ISSN 0021-4922
- Publisher:
- Japan Society of Applied PhysicsCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 2 works
Citation information provided by
Web of Science
Web of Science
Similar Records
Bismuth-induced Raman modes in GaP1–xBix
The Effect of Bismuth on the Structural Perfection and the Luminescent Properties of Thin-Film Elastically Stressed Al{sub x}In{sub y}Ga{sub 1–x–y}Bi{sub z}Sb{sub 1–z}/GaSb Heterostructures
Effects of molecular beam epitaxy growth conditions on composition and optical properties of In{sub x}Ga{sub 1-x}Bi{sub y}As{sub 1-y}
Journal Article
·
Fri Sep 02 00:00:00 EDT 2016
· Japanese Journal of Applied Physics
·
OSTI ID:1409005
+2 more
The Effect of Bismuth on the Structural Perfection and the Luminescent Properties of Thin-Film Elastically Stressed Al{sub x}In{sub y}Ga{sub 1–x–y}Bi{sub z}Sb{sub 1–z}/GaSb Heterostructures
Journal Article
·
Sun Jul 15 00:00:00 EDT 2018
· Physics of the Solid State
·
OSTI ID:1409005
+1 more
Effects of molecular beam epitaxy growth conditions on composition and optical properties of In{sub x}Ga{sub 1-x}Bi{sub y}As{sub 1-y}
Journal Article
·
Mon Mar 12 00:00:00 EDT 2012
· Applied Physics Letters
·
OSTI ID:1409005
+1 more