The Effect of Bismuth on the Structural Perfection and the Luminescent Properties of Thin-Film Elastically Stressed Al{sub x}In{sub y}Ga{sub 1–x–y}Bi{sub z}Sb{sub 1–z}/GaSb Heterostructures

Journal Article · Sun Jul 15 04:00:00 EDT 2018 · Physics of the Solid State

DOI:https://doi.org/10.1134/S1063783418070028· OSTI ID:22771092

Alfimova, D. L.; Lunina, M. L.; Pashchenko, A. S. ^[1]; Kazakova, A. E. ^[2]

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1. Russian Academy of Sciences, Southern Scientific Center (Russian Federation)
2. Platov State Polytechnic University (Russian Federation)

The effect of bismuth on the structural perfection and the luminescent properties of Al{sub x}In{sub y}Ga{sub 1–x–y}Bi{sub z}Sb{sub 1–z}/GaSb heterostructures has been studied. The optimal parameters of the process of zone recrystallization with temperature gradient at which epitaxial AlInGaBiSb layers have the minimum roughness and high structural perfection have been revealed: temperature gradient 1 ≤ G ≤ 30 K/cm, the liquid zone thickness 60 ≤ l ≤ 100 μm, the temperature range 773 K ≤ T ≤ 873 K, and bismuth concentration 0.3–0.4 mol fraction.

• OSTI ID: 22771092
• Journal Information: Physics of the Solid State, Journal Name: Physics of the Solid State Journal Issue: 7 Vol. 60; ISSN 1063-7834
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ANTIMONY COMPOUNDS
BISMUTH
BISMUTH COMPOUNDS
CONCENTRATION RATIO
CRYSTAL STRUCTURE
ELASTICITY
EPITAXY
GALLIUM ANTIMONIDES
GALLIUM COMPOUNDS
LAYERS
LIQUIDS
LUMINESCENCE
RECRYSTALLIZATION
ROUGHNESS
STRESSES
TEMPERATURE GRADIENTS
TEMPERATURE RANGE 0400-1000 K
THICKNESS
THIN FILMS