Growth and properties of InP-Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/
Journal Article
·
· Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:6336146
Epitaxial layers of the Ga-In-As-P system were grown by zone recrystallization in a temperature gradient (ZRTG) method with a solid feed. The composition of the epitaxial layers was measured using local x-ray spectral analysis. Component diffusion during ZRTG was theoretically calculated in the isothermal approximation taking into account the dependence of component diffusion coefficients on their concentration in the liquid phase. Theoretical analysis agrees adequately with experimental data on the component distribution in Ga/sub x/In/sub 1x/As/sub y/P/sub 1-y/ layers obtained by zone recrystallization in a temperature gradient method. This confirms the suitability of component distribution coefficients extracted from measurements on homogeneous Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/ layers to distribution calculations. Dislocation density concentration in Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/ layers depends mainly on the composition, zone thickness and temperature of zone recrystallization in a temperature gradient.
- Research Organization:
- S. Ordzhonikidze Novocherkassk Polytechnic Institute (USSR)
- OSTI ID:
- 6336146
- Journal Information:
- Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 24:2; ISSN INOMA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTAL MODELS
CRYSTAL STRUCTURE
DIFFUSION
DISLOCATIONS
DISPERSIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LATTICE PARAMETERS
LINE DEFECTS
MATHEMATICAL MODELS
MELTING
MIXTURES
PHASE TRANSFORMATIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RECRYSTALLIZATION
SEMICONDUCTOR JUNCTIONS
SOLID SOLUTIONS
SOLUTIONS
SPECTRA
TEMPERATURE GRADIENTS
X-RAY SPECTRA
ZONE MELTING
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTAL MODELS
CRYSTAL STRUCTURE
DIFFUSION
DISLOCATIONS
DISPERSIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LATTICE PARAMETERS
LINE DEFECTS
MATHEMATICAL MODELS
MELTING
MIXTURES
PHASE TRANSFORMATIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RECRYSTALLIZATION
SEMICONDUCTOR JUNCTIONS
SOLID SOLUTIONS
SOLUTIONS
SPECTRA
TEMPERATURE GRADIENTS
X-RAY SPECTRA
ZONE MELTING