Synthesis and properties of In{sub x}Al{sub y}Ga{sub 1–x–y}P{sub z}As{sub 1–z}/GaAs heterostructures

Journal Article · Fri Dec 15 04:00:00 EST 2017 · Inorganic Materials

DOI:https://doi.org/10.1134/S0020168517120019· OSTI ID:22788342

Alfimova, D. L.; Lunina, M. L. ^[1]; Kazakova, A. E. ^[2]; Pashchenko, A. S.; Chebotarev, S. N. ^[1]

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1. Russian Academy of Sciences, Southern Scientific Center (Russian Federation)
2. Platov State Polytechnic University (Russian Federation)

Phase equilibria in the In–Al–Ga–P–As system have been analyzed in terms of a simple solution model. We have calculated the stability limits of InAlGaPAs solid solutions on GaAs substrates in the temperature range 937–1223 K. The addition of indium to AlGaPAs solid solutions leads to a slight decrease in growth rate under diffusion control and a considerable increase under kinetic control. Moreover, the addition of indium to AlGaPAs solid solutions has been shown to reduce the full width at half maximum of their X-ray rocking curves and photoluminescence spectra and increase the photoluminescence intensity. Increasing the indium concentration in In{sub x}Al{sub y}Ga{sub 1–x–y}P{sub z}As{sub 1–z} solid solutions to x > 0.3 extends their stability region, increases their band gap, and reduces the composition region of lattice-matched In{sub x}Al{sub y}Ga{sub 1–x–y}P{sub z}As{sub 1–z}/GaAs heterostructures, but these become thermal expansion-matched. With increasing indium concentration in the solid solutions, the distribution coefficients of P and As decrease, whereas those of Al and In increase.

• OSTI ID: 22788342
• Journal Information: Inorganic Materials, Journal Name: Inorganic Materials Journal Issue: 12 Vol. 53; ISSN INOMAF; ISSN 0020-1685
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ARSENIC
CONCENTRATION RATIO
DIFFUSION
GALLIUM
GALLIUM ARSENIDES
INDIUM
INDIUM COMPLEXES
PHASE DIAGRAMS
PHOSPHORUS
PHOTOLUMINESCENCE
RECRYSTALLIZATION
SOLID SOLUTIONS
SYNTHESIS
TEMPERATURE RANGE 1000-4000 K
THERMAL EXPANSION
X-RAY DIFFRACTION