Structural and spectral features of MOCVD Al{sub x}Ga{sub y}In{sub 1-x-y}As{sub z}P{sub 1-z}/GaAs (100) alloys

Journal Article · Fri Jun 15 00:00:00 EDT 2012 · Semiconductors

DOI:https://doi.org/10.1134/S106378261206019X· OSTI ID:22004667

Glotov, A V; Domashevskaya, E P; Lenshin, A S; Smirnov, M S ^[1]; Vinokurov, D A; Stankevich, A L; Tarasov, I S ^[2]

---

1. Voronezh State University (Russian Federation)
2. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

The study is concerned with MOCVD epitaxial heterostructures grown on the basis of Al{sub x}Ga{sub y}In{sub 1-x-y}As{sub z}P{sub 1-z} quinary alloys in the region of alloy compositions isoperiodic to GaAs. By the X-ray diffraction technique and atomic force microscopy, it is shown that, on the surface of the heterostructures, there are nanometric objects capable of lining up along a certain direction. From calculations of the crystal lattice parameters with consideration for internal strains, it can be inferred that the new compound is a phase based on the Al{sub x}Ga{sub y}In{sub 1-x-y}As{sub z}P{sub 1-z} alloy.

• OSTI ID: 22004667
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 46; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOYS
ATOMIC FORCE MICROSCOPY
CHEMICAL VAPOR DEPOSITION
CRYSTAL LATTICES
EPITAXY
GALLIUM ARSENIDES
NANOSTRUCTURES
STRAINS
SURFACES
X-RAY DIFFRACTION