Liquid phase epitaxial In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/GaAs/sub 1-y/ P/sub y/ heterojunction lasers
The growth and laser properties of In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z//GaAs/sub 1-y/P/sub y/ single heterojunction laser diodes are described. High- quality p-type In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/ layers are grown by liquid phase epitaxy (LPE) on n-type VPE GaAs/sub 1-y/P/sub y/ substrates of composition y = 0.32 - 0.40. Laser operation (77$sup 0$K) of these quaternary-ternary heterojunctions is demonstrated at shorter wavelengths (less than 6300 A) and lower thresholds (J/sub th/ greater than or equal to 6.2 x 10$sup 4$ A/cm$sup 2$) than comparable GaAs/sub 1-y/P/sub y/ homojunctions. The increase observed in threshold current (5x) between y = 0.38 and y = 0.40 GaAs/sub 1-y/P/sub y/ substrates is attributed to the usual effect of E/sub X/ approaching E/sub P/ near the direct-indirect transition. From the well-defined cavity mode structure observed on these heterojunctions, data are obtained at relatively high energy on the index dispersion quantity (n - $gamma$[dn/d$gamma$]), which increases monotonically with photon energy and provides a reference for the distinctly different behavior observed on N-doped GaAs/sub 1-y/P/sub y/ (h$nu$ approximately E/sub P/ approximately E/sub N/). (auth)
- Research Organization:
- Univ. of Illinois, Urbana
- NSA Number:
- NSA-33-007216
- OSTI ID:
- 4161104
- Journal Information:
- IEEE J. Quant. Electron., v. QE-11, no. 7, pp. 471-476, Other Information: Orig. Receipt Date: 30-JUN-76
- Country of Publication:
- United States
- Language:
- English
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