Heterojunction laser operation of GaAs/sub 1-x/P/sub x/:N on NN-pair E/sub NN/ and A-line E/sub N/ transitions near the direct (GAMMA) band edge

Journal Article · Sat Nov 01 00:00:00 EST 1975 · J. Appl. Phys., v. 46, no. 11, pp. 4835-4841

OSTI ID:4135262

Coleman, J J; Holonyak, N Jr; Ludowise, M J; Nelson, R J; Wright, P D; Groves, W O; Keune, D L; Craford, M G

Single heterojunction diodes constructed by the LPE growth of In/sub 1-y/ Ga/sub y/P/sub 1-z/As/sub z/ on otherwise identical N-free and N-doped VPE GaAs/ sub 1-x//P/sub x/ substrates permit the examination of laser operation on NN-pair (E/sub NN/) and A-line (E/sub N/) recombination transitions near the direct (GAMMA) band edge of GaAs/sub 1-x/P/x/. Data are presented on the effect of NN- pair states on laser operation in the region absolute value E/sub Gamma/-E/sub NN/ absolute value approximately-less-than 50 meV (E/sub NN/

• Research Organization: Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• NSA Number: NSA-33-009140
• OSTI ID: 4135262
• Journal Information: J. Appl. Phys., v. 46, no. 11, pp. 4835-4841, Other Information: Orig. Receipt Date: 30-JUN-76
• Country of Publication: United States
• Language: English

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