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Variation of effective index of refraction in a double-heterojunction laser (In/sub 1//sub - x/Ga/sub x/P/sub 1//sub - z/As/sub z/)

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.323886· OSTI ID:7323338

Data (197 degreeK) on InP-In/sub 1//sub - x/Ga/sub x/P/sub 1//sub - z/As/sub z/-InP DH diodes are presented showing that the effective index of refraction of a semiconductor laser, (n (lambda)-lambda dn/dlambda), is not a single curve but, instead, is a family of curves that depends upon injection level.

Research Organization:
Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
OSTI ID:
7323338
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 48:5; ISSN JAPIA
Country of Publication:
United States
Language:
English