Yellow In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/ double heterojunction lasers
Journal Article
·
· J. Appl. Phys.; (United States)
Improved yellow-spectrum double-heterojunction In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/ laser diodes constructed by LPE on VPE GaAs/sub 1-y/P/sub y/ substrates are described. The lattice-matched LPE quaternary alloy growth process is outlined, as well as the need for complete melt removal between the growth of each heterojunction layer, which is more difficult for In-rich melts than for Ga-rich melts when lattice match is a problem. Over two times lower threshold current densities are demonstrated (J/sub th/approx. =3.6 x 10/sup 3/ A/cm/sup 2/, lambdaapprox. =5920 A, 77 /sup 0/K) than for the first reported diodes of this type. The temperature dependence of laser threshold current density is presented in the range 4.2--200 /sup 0/K. The threshold current density can be approximated as J/sub th/proportionalexp(T/T/sub 0/) with T/sub 0/approx. =52 /sup 0/K in the range 50 to 175 /sup 0/K, which compares well with red-orange AlGaAs double heterojunctions (T/sub 0/approx. =42 /sup 0/K) having greater heterobarriers. Laser operation in the yellow-orange portion of the visible spectrum at approx.200 /sup 0/K is demonstrated. These results on thick (1.5 ..mu..m) active layer diodes, having relatively small heterobarriers (..delta..Eapprox.65 meV), indicate that further improvement and control of the quaternary growth process will lead to still lower threshold currents and higher-temperature operation in the orange-yellow. (AIP)
- Research Organization:
- Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
- OSTI ID:
- 7293504
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 47:5; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Pulsed room-temperature operation of In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/ double heterojunction lasers at high energy (6470 A, 1. 916 eV)
Temperature dependence of threshold current for coupled multiple quantum-well In/sub 1-x/Ga/sub x/ P/sub 1-z/As/sub z/-InP heterostructure laser diodes
Liquid phase epitaxial In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/GaAs/sub 1-y/ P/sub y/ heterojunction lasers
Journal Article
·
Sun Aug 01 00:00:00 EDT 1976
· Appl. Phys. Lett.; (United States)
·
OSTI ID:7268999
Temperature dependence of threshold current for coupled multiple quantum-well In/sub 1-x/Ga/sub x/ P/sub 1-z/As/sub z/-InP heterostructure laser diodes
Journal Article
·
Thu May 01 00:00:00 EDT 1980
· J. Appl. Phys.; (United States)
·
OSTI ID:5371374
Liquid phase epitaxial In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/GaAs/sub 1-y/ P/sub y/ heterojunction lasers
Journal Article
·
Tue Jul 01 00:00:00 EDT 1975
· IEEE J. Quant. Electron., v. QE-11, no. 7, pp. 471-476
·
OSTI ID:4161104