Temperature dependence of threshold current for coupled multiple quantum-well In/sub 1-x/Ga/sub x/ P/sub 1-z/As/sub z/-InP heterostructure laser diodes

Journal Article · Thu May 01 04:00:00 EDT 1980 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.328009· OSTI ID:5371374

Rezek, E A; Holonyak, N Jr; Fuller, B K

Data are presented showing that the threshold current density, J/sub th/ (T)proportionalexp(T/T/sub 0/), of multiple quantum-well InGaPAs-InP heterostructure laser diodes, grown by LPE, exhibits a two-regime behavior similar to that of conventional InGaPAs-InP double-heterojunction lasers. At temperatures below a break-point temperature characteristic of the quaternary alloy, J/sub th/ (T) of these multiple quantum-well laser diodes is less temperature dependent (i.e., larger T/sub 0/, as high as 150 /sup 0/C) than that of regular quaternary DH lasers. At temperatures above the break-point temperature, J/sub th/ (T) is dominated by a poorly understood competing temperature-dependent nonradiative recombination process. In this range the T/sub 0/ of these multiple quantum-well diodes is similar to that of ordinary InGaPAs-InP DH diodes but, because of the large number of layers and large lower-temperature T/sub 0/, is not apt to be caused by defects at heterointerfaces.

• Research Organization: Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• OSTI ID: 5371374
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 51:5; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CURRENT DENSITY
DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INTERFACES
LASERS
LAYERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE