Bandfilling in liquid phase epitaxial InP-In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/-InP quantum-well heterostructure lasers
Journal Article
·
· J. Appl. Phys.; (United States)
The bandfilling and gain behavior of thin (L/sub z/approx.400 A) In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/ (xapprox.0.13, zapprox.0.29) layers imbedded in InP p-n junctions, or on one side of the active region of regular quaternary double heterojunctions (xapprox.0.09, zapprox.0.20), are described. Bandfilling and spontaneous emission are observed from the quaternary quantum-well band edge to the band edge of the InP confining layers (..delta..E/sub g/approx.245 meV, 77 K). Laser operation on confined-particle transitions can be observed in the range 00.1 ..mu..m) grown from the same set of LPE melts. To operate as lasers quantum-well heterostructures are shown to require greater diode lengths and higher excitation currents, consistent with large bandfilling (in a thin layer) leading to a large spectral spread in the recombination radiation. These effects are demonstrated also on quaternary double heterojunctions of standard active-layer thickness (>0.1 ..mu..m) but modified with the inclusion of a quantum well on one side of the active region.
- Research Organization:
- Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Illinois 61801
- OSTI ID:
- 6665207
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 49:11; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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