Determination of the valence-band discontinuity of InP/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/ (xapprox. 0. 13, zapprox. 0. 29) by quantum-well luminescence

Journal Article · Fri Jun 15 04:00:00 EDT 1979 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90702· OSTI ID:6040047

Chin, R; Holonyak, N Jr; Kirchoefer, S W; Kolbas, R M; Rezek, E A

By means of liquid-phase epitaxy, undoped single-quantum-well layers of In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/ (xapprox.0.13, zapprox.0.29) of thickness L/sub z/approx.150 A are grown embedded in InP and are examined in photoluminescence. Hot-electron recombination from E/sub c/ (InP) to bound holes in the quaternary quantum well leads to stimuated emission in a band approx.80 meV below E/sub g/ (InP) and thus to an estimate of ..delta..E/sub v/approx.80 meV (..delta..E/sub c/approx...delta..E/sub v/) for the InP-InGaPAs valence-band discontinuity.

• Research Organization: Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• OSTI ID: 6040047
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 34:12; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
EMISSION
ENERGY-LEVEL TRANSITIONS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HOLES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
LAYERS
LUMINESCENCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STIMULATED EMISSION
VALENCE