Single and multiple thin-layer (L/sub z/9 or approx. =400 A) In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/-InP heterostructure light emitters and lasers (lambdaapprox. 1. 1. mu. m, 77 /sup 0/K)

Journal Article · Sun Jan 01 04:00:00 EST 1978 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.324370· OSTI ID:5338337

Rezek, E A; Holonyak, N Jr; Vojak, B A; Shichijo, H

Liquid-phase epitaxial (LPE) single and multiple thin quaternary layer In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/ laser diodes (xapprox.0.13, zapprox.0.28; lambdaapprox.1.1 ..mu..m, 77 /sup 0/K) that exhibit quantum size effects (QSE) are described. LPE quaternary active layers approaching L/sub z/approx.200 A have been achieved. As a prototype for the behavior of multilayer heterostructures, the operation of single In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/ potential wells, or recombination layers, located a small distance into the p side of an InP p-n junction, is considered. Almost all the carrier recombination is observed to occur in the quaternary potential well, and little absorption occurs in the single-active-layer structure, consistent with the small change in the effective index of refraction measured in a large range (1500 A, 150 meV). This general behavior, i.e., single-well recombination, is observed also in thin-active-layer multilayer heterostructures in which the InP layers between quaternary layers are relatively thick (400--1000 A). In multilayered diode structures, distributed feedback may contribute, along with QSE, to modulation of the longitudinal (Fabry-Perot) modes.

• Research Organization: Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• OSTI ID: 5338337
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 49:1; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
CRYSTAL GROWTH
ELECTRONIC STRUCTURE
EMISSION
ENERGY-LEVEL TRANSITIONS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTION DIODES
JUNCTIONS
LASERS
LAYERS
MODULATION
OPTICAL MODES
OPTICAL PROPERTIES
OSCILLATION MODES
P-N JUNCTIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
RECOMBINATION
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STIMULATED EMISSION