Single thin-active-layer visible-spectrum In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/ heterostructure lasers

Journal Article · Sat Apr 01 04:00:00 EST 1978 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325062· OSTI ID:5093413

Chin, R; Holonyak, N Jr; Kolbas, R M; Rossi, J A; Keune, D L; Groves, W O

Single active-layer visible-spectrum In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/ heterostructure lasers are described that exhibit quantum size effects (QSE) in photoluminescence and by means of diode injection (lambda<6300 A). Liquid-phase epitaxial (LPE) quaternary layers as thin as approx.300 A have been realized. It is demonstrated that single thin-layer recombination wells (L/sub z/<1000 A) are very effective in the capture and recombination of carriers, even if injection occurs at some distance (a<1 ..mu..m) from the thin layer. On the other hand, optical confinement and absorption are weak in diodes with single active layers thin enough to exhibit QSE. This behavior indicates that the type of thin-active-layer diodes described here are not optimum as lasers, but may lead to improved light emitters.

• Research Organization: Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Illinois 61801
• OSTI ID: 5093413
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 49:4; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
EMISSION
ENERGY-LEVEL TRANSITIONS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTION DIODES
LASERS
LIGHT EMITTING DIODES
LUMINESCENCE
OPERATION
OPTICAL MODES
OSCILLATION MODES
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
STIMULATED EMISSION