Phonon-assisted recombination in a multiple-quantum-well LPE InP-In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/ heterostructure laser
Journal Article
·
· Appl. Phys. Lett.; (United States)
By means of computer-controlled liquid-phase epitaxy, multiple-quantum-well InP-In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/ (xapprox.0.13, zapprox.0.29) heterostructures of uniform well (L/sub z/approx.160 A) and coupling barrier size are grown and are examined in photoluminescence. Laser operation (77 /sup 0/K) of a six-well five-barrier undoped quaternary quantum-well heterostructure is identified an LO phonon energy (1 x h..omega../sub LO/approx.30 meV) below the lowest confined-particle transitions (No. 1 e..-->..hh, E/sub 1/) or at energy h..omega..approx.E/sub 1/-h..omega../sub LO/.
- Research Organization:
- Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
- OSTI ID:
- 6231500
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 35:1; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Bandfilling in liquid phase epitaxial InP-In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/-InP quantum-well heterostructure lasers
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Single and multiple thin-layer (L/sub z/9 or approx. =400 A) In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/-InP heterostructure light emitters and lasers (lambdaapprox. 1. 1. mu. m, 77 /sup 0/K)
Journal Article
·
Tue Oct 31 23:00:00 EST 1978
· J. Appl. Phys.; (United States)
·
OSTI ID:6665207
Determination of the valence-band discontinuity of InP/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/ (xapprox. 0. 13, zapprox. 0. 29) by quantum-well luminescence
Journal Article
·
Fri Jun 15 00:00:00 EDT 1979
· Appl. Phys. Lett.; (United States)
·
OSTI ID:6040047
Single and multiple thin-layer (L/sub z/9 or approx. =400 A) In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/-InP heterostructure light emitters and lasers (lambdaapprox. 1. 1. mu. m, 77 /sup 0/K)
Journal Article
·
Sat Dec 31 23:00:00 EST 1977
· J. Appl. Phys.; (United States)
·
OSTI ID:5338337
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DOPED MATERIALS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
LOW TEMPERATURE
LUMINESCENCE
PHONONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
QUASI PARTICLES
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DOPED MATERIALS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
LOW TEMPERATURE
LUMINESCENCE
PHONONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
QUASI PARTICLES
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS