Temperature dependence of threshold current for quantum-well Al/sub x/Ga/sub 1-x/As-GaAs heterostructure laser diodes

Journal Article · Tue Jan 01 04:00:00 EST 1980 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91290· OSTI ID:5921609

Chin, R; Holonyak, N Jr; Vojak, B A; Hess, K; Dupuis, R D; Dapkus, P D

Data are presented showing that the threshold current density J/sub th/(T) of quantum-well Al/sub x/Ga/sub 1-x/As-GaAs heterostructure laser diodes, grown by MO-CVD, is less temperature dependent than that of conventional DH lasers. T/sub 0/ in the usual expression J/sub th/proportionalexp(T/T/sub 0/) can be high as 437 /sup 0/C. This behavior is explained in terms of the steplike density of states and the disturbed electron and phonon distribution functions of the quantum-well active region.

• Research Organization: Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• OSTI ID: 5921609
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 36:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COMPARATIVE EVALUATIONS
CURRENT DENSITY
CURRENTS
DATA
DEPOSITION
DISTRIBUTION FUNCTIONS
ELECTRIC CURRENTS
ENERGY-LEVEL DENSITY
EQUATIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
MECHANICS
PNICTIDES
QUANTUM MECHANICS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SURFACE COATING
TEMPERATURE DEPENDENCE