Effect of substrate temperature on the current threshold of GaAs-Al/sub x/Ga/sub 1-x/As double-heterostructure lasers grown by molecular beam epitaxy

Journal Article · Mon Jan 14 23:00:00 EST 1980 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91400· OSTI ID:5803223

Tsang, W T; Reinhart, F K; Ditzenberger, J A

The current threshold densities (J/sub th/) of broad-area double-heterostructure (DH) lasers, the photoluminescence (PL) intensities of the p-GaAs cap layers, P-Al/sub x/Ga/sub 1-x/As (xapprox.0.3) confinement layers, and the GaAs active layers of the DH wafers are investigated as a function of the substrate temperature (450--650 /sup 0/C) during MBE growth. The PL intensities of the P-Al/sub x/Ga/sub 1-x/As (xapprox.0.3) confinement layers and the GaAs active layers increase and the J/sub th/'s of the DH lasers decrease with increasing substrate temperature. The improvement of J/sub th/ with increasing substrate temperature is found to be well correlated to the improvement of the optical qualities of the Al/sub x/Ga/sub 1-x/As layers with increasing substrate temperature. However, the PL intensities of the p-GaAs cap layers are relatively independent of substrate temperature.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 5803223
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 36:2; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CORRELATIONS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CURRENT DENSITY
DATA
DEPOSITION
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HIGH TEMPERATURE
INFORMATION
LASERS
LAYERS
LUMINESCENCE
MOLECULAR BEAMS
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SUBSTRATES
SURFACE COATING
TEMPERATURE DEPENDENCE