Very low current threshold GaAs-Al/sub x/Ga/sub 1-x/As double-heterostructure lasers grown by molecular beam epitaxy
GaAs-Al/sub x/Ga/sub 1-x/As (x=0.3) double-heterostructure (DH) lasers having very low current threshold densities have been prepared by molecular beam epitaxy (MBE). For DH lasers having Al-mole-fraction differences between the active layers and Al/sub x/Ga/sub 1-x/As confinement layers ..delta..xapprox.0.3, the best of the MBE-grown DH laser wafers have averaged current threshold densities similar to those obtained from the best of similar-geometry DH lasers prepared by liquid-phase epitaxy (LPE) and by metalorganic chemical vapor deposition (MO-CVD). With ..delta..x=0.3, the lowest averaged current threshold density achieved is 800 A/cm/sup 2/ (without reflective coating) for a wafer with an active layer thickness of 0.15 ..mu..m.
- Research Organization:
- Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 5707046
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 36:1; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CURRENT DENSITY
DATA
DEPOSITION
ELEMENTS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
LAYERS
METALS
MOLECULAR BEAMS
PNICTIDES
QUANTITY RATIO
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING