Infrared-visible (0. 89--0. 72. mu. m) Al/sub x/Ga/sub 1-x/As/Al/sub y/Ga/sub 1-y/As double-heterostructure lasers grown by molecular beam epitaxy
Journal Article
·
· J. Appl. Phys.; (United States)
Room-temperature low-current-threshold broad-area Fabry-Perot Al/sub x/Ga/sub 1-x/As/Al/sub y/Ga/sub 1-y/ As double-heterostructure (DH) lasers have been prepared by molecular-beam epitaxy (MBE) covering the lasing emission wavelength from 8900 to 7200 A (infrared to visible). In this emission range, the averaged pulsed current threshold densities J/sub th/ are as low as those obtained by liquid-phase epitaxy (LPE). At approx.8200 A, the wavelength at which DH lasers have also been prepared by metalorganic chemical-vapor deposition (MO-CVD), the J/sub th/ 's of the MBE grown lasers are lower.
- Research Organization:
- Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 5507297
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 51:2; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Very low current threshold GaAs-Al/sub x/Ga/sub 1-x/As double-heterostructure lasers grown by molecular beam epitaxy
Ga/sub( 1-x)/Al/sub x/As/Ga/sub( 1-y)/Al/sub y/As double-heterostructure room-temperature lasers grown by metalorganic chemical vapor deposition
Laser oscillation with optically pumped very thin GaAs-Al/sub x/Ga/sub x/As multilayer structures and conventional double heterostructures
Journal Article
·
Mon Dec 31 23:00:00 EST 1979
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5707046
Ga/sub( 1-x)/Al/sub x/As/Ga/sub( 1-y)/Al/sub y/As double-heterostructure room-temperature lasers grown by metalorganic chemical vapor deposition
Journal Article
·
Wed Dec 14 23:00:00 EST 1977
· Appl. Phys. Lett.; (United States)
·
OSTI ID:7282749
Laser oscillation with optically pumped very thin GaAs-Al/sub x/Ga/sub x/As multilayer structures and conventional double heterostructures
Journal Article
·
Fri Oct 01 00:00:00 EDT 1976
· J. Appl. Phys.; (United States)
·
OSTI ID:7156483
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CURRENT DENSITY
DEPOSITION
ELECTROMAGNETIC RADIATION
EPITAXY
FABRY-PEROT INTERFEROMETER
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFRARED RADIATION
INTERFEROMETERS
LASERS
MEASURING INSTRUMENTS
MEDIUM TEMPERATURE
MOLECULAR BEAMS
PNICTIDES
PULSES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING
VISIBLE RADIATION
WAVELENGTHS
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CURRENT DENSITY
DEPOSITION
ELECTROMAGNETIC RADIATION
EPITAXY
FABRY-PEROT INTERFEROMETER
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFRARED RADIATION
INTERFEROMETERS
LASERS
MEASURING INSTRUMENTS
MEDIUM TEMPERATURE
MOLECULAR BEAMS
PNICTIDES
PULSES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING
VISIBLE RADIATION
WAVELENGTHS